Directional emission InP/GaInAsP square-resonator microlasers

被引：83

作者：

Huang, Yong-Zhen ^{[1
]}

Che, Kai-Jun ^{[1
]}

Yang, Yue-De ^{[1
]}

Wang, Shi-Jiang ^{[1
]}

Du, Yuri ^{[1
]}

Fan, Zhong-Chao ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Integrated Optoelect, Beijing 100083, Peoples R China

来源：

OPTICS LETTERS | 2008年 / 33卷 / 19期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1364/OL.33.002170

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mu m-side square microlaser with a 2-mu m-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0 X 10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA. (C) 2008 Optical Society of America

引用

页码：2170 / 2172

页数：3

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