A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

被引:79
作者
Kobayashi, KW [1 ]
Oki, AK
Tran, LT
Cowles, JC
Gutierrez-Aitken, A
Yamada, F
Block, TR
Streit, DC
机构
[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA
[2] Analog Devices Inc, Beaverton, OR 97006 USA
关键词
heterojunction bipolar transistor (HBT); InP; monolithic microwave integrated circuit (MMIC); oscillator; push-push; voltage-controlled oscillator; W-band;
D O I
10.1109/4.782080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported, The W-band VCO is based on a push-push oscillator topology, which employs InP-HBT technology with peak f(T)'s and f(max)'s of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 Omega. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO, The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeterwave frequency source applications.
引用
收藏
页码:1225 / 1232
页数:8
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