Near infrared electroluminescence from neodymium complex-doped polymer light emitting diodes

被引:53
作者
O'Riordan, A
O'Connor, E
Moynihan, S
Nockemann, P
Fias, P
Van Deun, R
Cupertino, D
Mackie, P
Redmond, G
机构
[1] Tyndall Natl Inst, Nanotechnol Grp, Cork, Ireland
[2] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium
[3] Avecia Ltd, Manchester M9 8ZS, Lancs, England
关键词
neodymium complex; sensitization; electroluminescence; polymer; solution processing;
D O I
10.1016/j.tsf.2005.10.071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic light emitting diode devices employing organometallic Nd(9-hydroxyphenalen-1-one)(3) complexes as near infrared emissive dopants dispersed within poly(N-vinylcarbazole) (PVK) host matrices have been fabricated by spin-casting layers of the doped polymer onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. Room temperature electroluminescence, centered at similar to 1065 nm. was observed from devices top contacted by evaporated aluminum or calcium metal cathodes and was assigned to transitions between the F-4(3/2) -> I-4(11/2) levels of the Nd3+ ions. In particular, a near infrared irradiance of 8.5 nW/mm(2) and an external quantum efficiency of 0.007% was achieved using glass/ITO/PEDOT/PVK:Nd(9-hydroxyphenalen-1-one)(3)/Ca/Al devices. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:299 / 303
页数:5
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