Direction-dependent homoepitaxial growth of GaN nanowires

被引：60

作者：

Li, HW ^{[1
]}

Chin, AH ^{[1
]}

Sunkara, MK ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, ELORET, Moffett Field, CA 94035 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 02期

关键词：

D O I：

10.1002/adma.200501716

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaN nanowires with vastly different morphologies depending upon the growth direction are produced by direct nitridation and vapor transport of Gain disassociated ammonia. Nanowires grown homoepitaxially along the c-direction develop hexagonal-prism island morphologies (see Figure, left, and Cover), while wires grown along the a-direction form uniform, belt-shaped morphologies (Figure, right). A "ballistic" transport phenomenon for adatoms is proposed to explain the observed prismatic island morphologies.

引用

收藏

页码：216 / +

页数：6

相关论文

共 25 条

[1] Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders [J].

Bergman, L ;

Chen, XB ;

Morrison, JL ;

Huso, J ;

Purdy, AP .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :675-682

[2] ON VISCOUS MECHANISM FOR SURFACE-DIFFUSION AT HIGH-TEMPERATURES (T/TM-GREATER-THAN-0.75) DUE TO FORMATION OF A 2D DENSE FLUID ON METALLIC SURFACES [J].

BINH, VT ;

MELINON, P .

SURFACE SCIENCE, 1985, 161 (01) :234-244

[3]

Chandrasekaran H, 2002, MATER RES SOC SYMP P, V693, P159

[4] Gallium nitride and related materials: challenges in materials processing [J].

Davis, RF ;

Einfeldt, S ;

Preble, EA ;

Roskowski, AM ;

Reitmeier, ZJ ;

Miraglia, PQ .

ACTA MATERIALIA, 2003, 51 (19) :5961-5979

[5] Two-dimensional zinc oxide nanostructure [J].

Deng, GC ;

Ding, AL ;

Cheng, WX ;

Zheng, XS ;

Qiu, PS .

SOLID STATE COMMUNICATIONS, 2005, 134 (04) :283-286

[6]

Feng DP, 1999, PHYS STATUS SOLIDI A, V176, P1003, DOI 10.1002/(SICI)1521-396X(199912)176:2<1003::AID-PSSA1003>3.0.CO

[7]

2-G

[8] PREPARATION OF SILICON RIBBONS [J].

GREINER, ES ;

ELLIS, WC ;

GUTOWSKI, JA .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (11) :2489-&

[9] Gallium nitride nanowire nanodevices [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (02) :101-104

[10] Role of surface diffusion in chemical beam epitaxy of InAs nanowires [J].

Jensen, LE ;

Björk, MT ;

Jeppesen, S ;

Persson, AI ;

Ohlsson, BJ ;

Samuelson, L .

NANO LETTERS, 2004, 4 (10) :1961-1964