Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders

被引:121
作者
Bergman, L [1 ]
Chen, XB
Morrison, JL
Huso, J
Purdy, AP
机构
[1] Univ Idaho, Dept Phys, Moscow, ID 83844 USA
[2] USN, Res Lab, Div Chem, Washington, DC 20375 USA
关键词
D O I
10.1063/1.1759076
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present photoluminescence (PL) studies of GaN and ZnO nanocrystallites and powders. Our studies show that in addition to the intrinsic photoluminescence characteristics, the photoluminescence properties of the porous media are also a strong function of conditions such as ensemble size and powder density, ultraviolet-laser excitation power, and vacuum state. PL redshifts up to 120 meV were observed for GaN and ZnO crystallites and were attributed to laser heating and heat trapping in the ensemble. The electron-phonon interaction model for GaN indicated ensemble temperature similar to550 K, which is consistent with the finding obtained via high-temperature PL and Raman experiments. The PL in the vacuum state exhibited a significant redshift, similar to80 meV relative to that in air, and the PL of a dense ZnO pellet was found to resemble that of the bulk more than does a loose powder. The PL analyses indicated an excitonic emission at room temperature for both GaN and ZnO crystallites with intensity saturation occurring for large ensembles at high laser power. (C) 2004 American Institute of Physics.
引用
收藏
页码:675 / 682
页数:8
相关论文
共 47 条
[1]   BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].
BERGGREN, KF ;
SERNELIUS, BE .
PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986
[2]   Impact of ultraviolet-laser heating on the photoluminescence of ensembles of GaN microcrystallites [J].
Bergman, L ;
Chen, XB ;
Feldmeier, J ;
Purdy, AP .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :764-766
[3]  
Bergman L, 2000, SPRINGER SERIES MATE, V42, P273
[4]   Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice [J].
Bergman, L ;
Dutta, M ;
Stroscio, MA ;
Komirenko, SM ;
Nemanich, RJ ;
Eiting, CJ ;
Lambert, DJH ;
Kwon, HK ;
Dupuis, RD .
APPLIED PHYSICS LETTERS, 2000, 76 (15) :1969-1971
[5]   Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates [J].
Chen, YF ;
Hong, SK ;
Ko, HJ ;
Nakajima, M ;
Yao, T ;
Segawa, Y .
APPLIED PHYSICS LETTERS, 2000, 76 (02) :245-247
[6]   PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS FOR EVALUATION OF HIGH-QUALITY CDTE CRYSTALS [J].
COOPER, DE ;
BAJAJ, J ;
NEWMAN, PR .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :544-551
[7]  
De-Sheng J., 1982, J. Appl. Phys, V53, P999
[8]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[9]   Laser-assisted catalytic growth of single crystal GaN nanowires [J].
Duan, XF ;
Lieber, CM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) :188-189
[10]   LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF (001) CDTE-FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT DIFFERENT SUBSTRATE TEMPERATURES [J].
FENG, ZC ;
MASCARENHAS, A ;
CHOYKE, WJ .
JOURNAL OF LUMINESCENCE, 1986, 35 (06) :329-341