Effects of electric field on silicide formation

被引：5

作者：

Murakami, H

Ono, K

Takai, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Tokyo Denki University, Tokyo 101, 2-2, Kanda-Nishiki-cyo, Chiyoda-ku

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

Nb-silicide; Ni-silicide; electric field; growth kinetics; electrostatic force;

D O I：

10.1016/S0169-4332(97)80096-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effects of an external electric field during annealing on the Ni- and Nb-silicide formation were investigated. Formation of Nb- and Ni-silicides can be accelerated or retarded in the presence of an external electric field during the annealing. It was found that enhancement of silicidation depends not on the polarity of the applied voltage, but on \V\. The activation energies E-a of Nb-silicides are found not be affected by the applied voltage, but the pre-exponential factors L-0 of the linear reaction rate constant are found to be 1.1 X 10(6) and 6.3 X 10(7) cm/s for 0 and +/- 1 kV, respectively.

引用

页码：289 / 293

页数：5

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