DOPANT EFFECT ON INTRINSIC DIFFUSIVITY IN NICKEL SILICIDE

被引：7

作者：

TAKAI, H ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.38.8121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8121 / 8130

页数：10

共 15 条

[1]

Bardeen J., 1951, ATOM MOVEMENTS, P87

[2] CORRELATION FACTORS FOR DIFFUSION IN SOLIDS [J].

COMPAAN, K ;

HAVEN, Y .

TRANSACTIONS OF THE FARADAY SOCIETY, 1956, 52 (06) :786-801

[3]

GOSELE U, 1982, J APPL PHYS, V53, P8759, DOI 10.1063/1.330477

[4] NEW TECHNIQUE FOR CALCULATING CORRELATIONS FOR VACANCY DIFFUSION [J].

HUNTINGDON, HB ;

GHATE, PB .

PHYSICAL REVIEW LETTERS, 1962, 8 (11) :421-&

[5]

LAZARUS D, 1960, SOLID STATE PHYS, V10, P71

[6]

MANNING JR, 1968, DIFFUSION KINETICS A

[7] INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS [J].

OLOWOLAFE, JO ;

NICOLET, MA ;

MAYER, JW .

THIN SOLID FILMS, 1976, 38 (02) :143-150

[8]

PEARSON WB, 1972, CRYSTAL CHEM PHYSICS

[9] STRUCTURE AND GROWTH-KINETICS OF RHSI ON SINGLE-CRYSTAL, POLYCRYSTALLINE, AND AMORPHOUS-SILICON SUBSTRATES [J].

PSARAS, PA ;

THOMPSON, RD ;

HERD, SR ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3536-3543

[10]

Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]

← 1 2 →