Observation of oxide-thickness-dependent interface roughness in Si MOS structure

被引：22

作者：

Koga, J

Takagi, S

Toriumi, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

Si; SiO2; interface roughness; thermal oxidation; channel mobility; interface state density; recovery process;

D O I：

10.1143/JJAP.35.1440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between roughness at the Si/SiO2 interface and the oxide thickness was investigated by means of a nondestructive measuring method, using the Si metal-oxide-semiconductor (MOS) structure. It was demonstrated that the Si/SiO2 interface roughness recovers during thermal oxidation. This recovery process was also verified by observation with the transmission electron microscope (TEM). It was found that the recovery effect on the roughness at the Si/SiO2 interface depends on the oxidation process and that it is more significant in wet oxidation than in dry oxidation.

引用

页码：1440 / 1444

页数：5

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