Proton radiation effects on SI LEC GaAs detector performances

被引：5

作者：

Chiossi, C

Nava, F

Canali, C

DAuria, S

delPapa, C

Castaldini, A

Cavallini, A

Lanzieri, C

机构：

[1] DEPT FIS,I-41100 MODENA,ITALY

[2] IST NAZL FIS NUCL,I-40126 BOLOGNA,ITALY

[3] DEPT SCI INGN,I-41100 MODENA,ITALY

[4] INFM,MODENA,ITALY

[5] DEPT FIS,I-33100 UDINE,ITALY

[6] IST NAZL FIS NUCL,TRIESTE,ITALY

[7] DEPT FIS,I-40126 BOLOGNA,ITALY

[8] CETME,ALENIA SPA,I-00131 ROME,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 388卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(96)01258-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semi-insulating GaAs detectors have been irradiated with 24 GeV/c protons with 3.87 and 5.6 x 10(13) cm(-2) doses. Both electron and hole lifetimes are affected by the radiation damage, the hole lifetime much more dramatically. Nevertheless, by operating at high reverse bias voltage (600 V), 70% of the alpha-particle-generated charge carriers are collected on average. A few traps for electrons (0.14 eV) and holes (0.54 eV) have been detected only in the irradiated detectors. These findings have been correlated to the performance of the irradiated GaAs detectors.

引用

页码：379 / 382

页数：4

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