GAAS SOLID-STATE DETECTORS FOR PARTICLE PHYSICS

被引:34
作者
BEAUMONT, SP
BERTIN, R
BOOTH, CN
BUTTAR, C
CARRARESI, L
CINDOLO, F
COLOCCI, M
COMBLEY, FH
DAURIA, S
DELPAPA, C
DOGRU, M
EDWARDS, M
FIORI, F
FOSTER, F
FRANCESCATO, A
HOU, Y
HOUSTON, P
JONES, B
LYNCH, JG
LISOWSKI, B
MATHESON, J
NAVA, F
NUTI, M
OSHEA, V
PELFER, PG
RAINE, C
SANTANA, J
SAUNDERS, I
SELLER, PH
SHARP, PH
SKILLIKORN, IO
SLOAN, T
SMITH, KM
TARTONI, N
TENHAVE, I
TURNBULL, RM
VINATTIERI, A
ZICHICHI, A
机构
[1] CERN,CH-1211 GENEVA 23,SWITZERLAND
[2] INFN,BOLOGNA,ITALY
[3] UNIV FLORENCE,DIPARTIMENTO FIS,I-50121 FLORENCE,ITALY
[4] INFN,FLORENCE,ITALY
[5] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,SCOTLAND
[6] UNIV LANCASTER,DEPT PHYS,LANCASTER LA1 4YW,ENGLAND
[7] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[8] INFN,MODENA,ITALY
[9] RUTHERFORD APPLETON LAB,DIDCOT OX11 0QX,OXON,ENGLAND
[10] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
[11] UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
关键词
D O I
10.1016/0168-9002(92)91217-W
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report on progress with Schottky diode and p-i-n diode GaAs detectors for minimum ionising particles. The radiation hardness and potential speed of simple diodes is shown to be more than competitive with silicon detector. A discussion is given of the present understanding of the charge transport mechanism in the detectors since it influences their charge collection efficiency. Early results from microstrip detectors are also described.
引用
收藏
页码:472 / 482
页数:11
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