Robust Computational Models of Quantum Transport in Electronic Devices

被引：2

作者：

Fedoseyev, A. I. ^{[1
]}

Przekwas, A. ^{[1
]}

Turowski, M. ^{[1
]}

Wartak, M. S. ^{[2
]}

机构：

[1] CFD Res Corp CFDRC, Huntsville, AL 35805 USA

[2] Wilfrid Laurier Univ, Dept Phys & Comp Sci, Waterloo, ON N2L 3C5, Canada

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2004年 / 3卷 / 3-4期

基金：

加拿大自然科学与工程研究理事会;

关键词：

simulations; nanoscale devices; tunnel junction; quantum tunneling;

D O I：

10.1007/s10825-004-7051-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A family of efficient quantum transport models for simulation of modern nanoscale devices is presented. These models are used for quantitative calculations of quantum currents in nanoscale electronic devices within our device simulator software. Specifically, we used them to simulate the tunneling current through thin barrier in vertical-cavity surface-emitting laser (VCSEL), direct and reverse tunnel currents through the tunnel junction, Schottky contact characteristics, and gate induced drain leakage (GIDL).

引用

页码：231 / 234

页数：4

共 6 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].