Is indium tin oxide a suitable electrode in organic solar cells?: Photovoltaic properties of interfaces in organic p/n junction photodiodes

被引:30
作者
Jahng, WS
Francis, AH
Moon, H
Nanos, JI
Curtis, MD [1 ]
机构
[1] Univ Michigan, Dept Chem, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Ctr Macromol Sci & Engn, Ann Arbor, MI 48109 USA
关键词
D O I
10.1063/1.2180881
中图分类号
O59 [应用物理学];
学科分类号
摘要
The charge generation properties at all interfaces of a p/n junction, bilayer photodiode have been investigated by means of the photoaction spectrum (PAS) as a function of applied bias. The organic photodiode was fabricated with a low-glass transition temperature (T-g) polysiloxane with pendant hydrazone groups as the p-type material and a perylene diimide derivative as the n-type material. The PAS under short circuit and reverse bias showed an antibatic response at the high-energy region (3.0-3.5 eV), and a symbatic response at the low-energy region (2.0-3.0 eV). However, under forward bias, the PAS showed the opposite behavior. These results are interpreted in terms of the band structure of tin-doped indium oxide (ITO) that prevents effective photoinjection of electrons at the polymer/ITO interface and the relative energy levels of the constituent materials. (c) 2006 American Institute of Physics.
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