Residual stress in thin-film parylene-c

被引：74

作者：

Harder, TA ^{[1
]}

Yao, TJ ^{[1
]}

He, Q ^{[1
]}

Shih, CY ^{[1
]}

Tai, YC ^{[1
]}

机构：

[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

来源：

FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2002年

关键词：

D O I：

10.1109/MEMSYS.2002.984296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the influence of thermal annealing on the residual stress in parylene-c thin-films on silicon. Although recently others have used the diaphragm bulge testing method to measure the residual stress in parylene, this is the first extensive study of residual stress in parylene using the load-deflection method and rotating tip strain gages. This paper supports the hypothesis that stress is relaxed in parylene-c films at elevated temperatures (>100 degreesC) and that thermal stress accounts for 90% of the residual stress in films that have undergone annealing at these elevated temperatures. It was found that this held true up to 180 degreesC which is above the glass transition temperature of the material.

引用

页码：435 / 438

页数：4

共 7 条

[1] STRESS IN THERMALLY ANNEALED PARYLENE FILMS [J].