Critical fluctuation-induced thinning of 4He films near the superfluid transition

被引：187

作者：

Garcia, R ^{[1
]}

Chan, MHW ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.83.1187

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report dielectric constant measurements showing critical fluctuation-induced thinning of He-4 films near the superfluid transition. The films are adsorbed on a stack of copper electrodes suspended at different heights above bulk liquid. We calibrate the measurements by assuming that the film thickness away from the transition region at different heights is accurately given by theory. The thinning is found to be consistent with finite-size scaling, if the value of the scaling function for each thickness is normalized by its value at the minimum.

引用

页码：1187 / 1190

页数：4

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