A model of chemical mechanical polishing - II. Polishing pressure and speed

被引：23

作者：

Paul, E ^{[1
]}

机构：

[1] Stockton State Coll, Pomona, NJ 08240 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 05期

关键词：

D O I：

10.1149/1.1469912

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A model of chemical mechanical polishing is extended to include the effects of polishing pressure and speed on the polishing rate. The result predicts both Preston and non-Preston behavior in different limits. The role of pressure is affected by the material properties of the polishing pad and the workpiece surface. Rate predictions are compared to experimental data for metal and oxide polishing. (C) 2002 The Electrochemical Society.

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页码：G305 / G308

页数：4

相关论文

共 10 条

[1] Effect of particle size during tungsten chemical mechanical polishing [J].

Bielmann, M ;

Mahajan, U ;

Singh, RK .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (08) :401-403

[2] COMPARISON OF FORMATION KINETICS OF PASSIVATING LAYER OF WO3 ON (100) AND (110) ORIENTATED TUNGSTEN MONO-CRYSTAL ELECTRODES IN H2SO4 1M MEDIUM [J].

FAUCONNIER, J ;

VENNEREAU, P .

ELECTROCHIMICA ACTA, 1978, 23 (02) :113-119

[3]

Iler R.K., 1979, The Chemistry of Silica

[4] CHEMICAL-MECHANICAL POLISHING FOR FABRICATING PATTERNED W METAL FEATURES AS CHIP INTERCONNECTS [J].

KAUFMAN, FB ;

THOMPSON, DB ;

BROADIE, RE ;

JASO, MA ;

GUTHRIE, WL ;

PEARSON, DJ ;

SMALL, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3460-3465

[5] Application of a CMP model to tungsten CMP [J].

Paul, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (06) :G359-G363

[6] A model of chemical mechanical polishing [J].

Paul, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (06) :G355-G358

[7] Modeling of chemical-mechanical polishing with soft pads [J].

Shi, FG ;

Zhao, B .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (02) :249-252

[8] Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries II. Roles of colloid species and slurry chemistry [J].

Stein, DJ ;

Hetherington, DL ;

Cecchi, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (05) :1934-1938

[9] Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries - I. Role of alumina and potassium iodate [J].

Stein, DJ ;

Hetherington, DL ;

Cecchi, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) :376-381

[10] Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes [J].

Tseng, WT ;

Wang, YL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :L15-L17