Precise magnetization measurements of single-crystalline FeSi under high pressure

Magnetization process and susceptibility measurements at high pressures up to P = 12 kbar have been performed on single-crystalline FeSi in the temperature range from T = 5 K to 300 K using a SQUID magnetometer with a miniature high-pressure clamp cell. From the analyses of these data, the volume dependence of the susceptibility chi for T = 300 K is estimated to be d ln chi/d lnV = 10.3. Using an exchange enhanced semiconductor model, the energy gal, for T = 0 K, E-g(0), and the volume dependence of E-g(0), d ln E-g(0)/d ln V, are evaluated to be 62 meV for P = 0 kbar and -10.8, respectively.