Evolution of a metallic and magnetic state in (Fe,Mn)Si and Fe(Si,Ge)

被引：17

作者：

Bauer, E

Galatanu, A

Hauser, R

Reichl, C

Wiesinger, G

Zaussinger, G

Galli, M

Marabelli, F

机构：

[1] Vienna Tech Univ, Inst Expt Phys, A-1040 Vienna, Austria

[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[3] Univ Pavia, Ist Nazl Fis Mat, I-27100 Pavia, Italy

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1998年 / 177卷

关键词：

narrow-gap semiconductor; Kondo insulator;

D O I：

10.1016/S0304-8853(97)00786-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analysis of the pressure-dependent resistivity of FexMn1-xSi(1 less than or equal to x less than or equal to 0.82) and FeSixGe1-x (1 less than or equal to x less than or equal to 0.6) alloys in terms of a Kondo insulator description revealed a pressure-induced opening of the narrow gap. A negative magnetoresistance is observed for Fe-rich alloys of FexMn1-xSi at elevated temperatures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1401 / 1402

页数：2

共 9 条

[1]

Aeppli G., 1992, Comments Condens. Matter Phys., V16, P155

[2] Stoichiometric effects on the optical spectra and pressure response of Fe1-xMnxSi [J].