Kinetic Monte Carlo approach to modeling dislocation mobility

被引:17
作者
Cai, W
Bulatov, VV
Justo, JF
Argon, AS
Yip, S
机构
[1] MIT, Dept Nucl Engn, Cambridge, MA 02139 USA
[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[3] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
关键词
dislocation; kinetic Monte Carlo; silicon; BCC metals;
D O I
10.1016/S0927-0256(01)00223-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We describe a kinetic Monte Carlo (kMC) approach to modeling dislocation motion. directly linking the energetics of dislocation kink nucleation and migration on the atomistic scale with the experimental data on the microscale. A study of planar glide of screw dislocation in St. an ideal test-bed for our method is first discussed, followed by preliminary results for a more complicated problem. three-dimensional motion of screw dislocation in BCC metals. We find that accuracy of the model predictions. even in the favorable case of Si. cannot claim to be quantitative because of uncertainties in the atomistic results for kink energetics. On the other hand. the kMC method is useful for qualitatively probing the mechanisms controlling dislocation motion. and it is capable of providing plausible explanation of some puzzling features of the experimental data. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:124 / 130
页数:7
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