Nitridation of GaP(001) surface by electron cyclotron resonance assisted N2 plasma

被引：10

作者：

Hashizume, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitridation of GaP(001) surface was achieved at 400 degrees C by exposure to electron cyclotron resonance assisted N-2 plasma. Detailed x-ray photoelectron spectroscopy analysis showed that after the initial stage of nitridation, the GaP surface included both of the Ga-N and P-N bonding components, while a near-stoichiometric GaN layer was formed after a 60 min nitridation process. A weak cathodoluminescence peak was detected at around 3.3 eV for the nitrided surface after 60 min of nitridation. (C) 1999 American Institute of Physics. [S0003-6951(99)00231-4].

引用

页码：615 / 617

页数：3

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