Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

被引：25

作者：

Makimoto, T ^{[1
]}

Kumakura, K ^{[1
]}

Nishida, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 04期

关键词：

GaN; InGaN; band offset; p-InGaN; heterojunction diode; capacitance-voltage characteristics; valence-band discontinuity;

D O I：

10.1007/s11664-002-0149-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (DeltaE(V)) increases with the In mole fraction (x) and is expressed as DeltaE(V) (eV) = 0.85x for xless than or equal to0.28. The DeltaE(V) value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

引用

页码：313 / 315

页数：3