Thiophene-phenylene and thiophene-thiazole oligomeric semiconductors with high field-effect transistor on/off ratios

被引：147

作者：

Hong, XM ^{[1
]}

Katz, HE ^{[1
]}

Lovinger, AJ ^{[1
]}

Wang, BC ^{[1
]}

Raghavachari, K ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

CHEMISTRY OF MATERIALS | 2001年 / 13卷 / 12期

关键词：

D O I：

10.1021/cm010496z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A series of thiophene-containing oligomers that are less electron rich than alpha-6T were synthesized, and the thin film morphologies and field-effect transistor characteristics of the oligomers were evaluated. Phenyl and thiazole rings were included in many of the oligomers, and a new synthesis of perfluoroalkylmethyl-terminated oligomers was developed. Desirably low off currents were associated with calculated highest occupied molecular orbital energies above ca. 5.0 eV relative to vacuum. Some of the oligomers displayed mobilities above 0.01 cm(2) (Vs)(-1), but there was no correlation of mobility with calculated orbital energies and some compounds with seemingly continuous morphologies had low mobilities nonetheless. One compound, 1,4-bis(5'-hexyl-2,2'-bithiophen-5-yl)benzene, showed promising behavior as a solution-deposited semiconductor, with mobility up to 0.02 cm(2) (Vs)(-1) and an on/off ratio up to 20 000.

引用

页码：4686 / 4691

页数：6

共 35 条

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