High performance organic semiconducting thin films: Ink jet printed polythiophene [rr-P3HT]

被引：70

作者：

Speakman, Stuart P. ^{[1
,2
]}

Rozenberg, Greogor G. ^{[1
]}

Clay, Kim J. ^{[3
]}

Milne, William I. ^{[2
]}

Ille, Adelina ^{[2
]}

Gardner, Ian A. ^{[3
]}

Bresler, Eric ^{[3
]}

Steinke, Joachim H. G. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[3] Patterning Technol Ltd, Royston SG8 5DY, Herts, England

来源：

ORGANIC ELECTRONICS | 2001年 / 2卷 / 02期

关键词：

Diode; Inkjet; Organic; Polymer; Polythiophene; Printing;

D O I：

10.1016/S1566-1199(01)00011-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The piezoelectric ink jet (IJ) printing of an organic semiconducting ink, as applied to the fabrication of a thin film diode, has been demonstrated. IJ printed regioregular poly (3-hexylthiophene-2,5-diyl) [rr-P3HT] semiconducting films were directly patterned on to gold thin film contact surfaces. The resulting metal semiconductor metal diode exhibited low leakage current and a good forward reverse current ratio. IJ printing of the P3HT as directly patterned thin films represents a significant step toward the realisation of cheap, large area, organic microelectronic devices and transistor active matrix backplanes. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：65 / 73

页数：9

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