Model for Schottky barrier and surface states in nanostructured n-type semiconductors

被引：117

作者：

Malagù, C ^{[1
]}

Guidi, V ^{[1
]}

Stefancich, M ^{[1
]}

Carotta, MC ^{[1
]}

Martinelli, G ^{[1
]}

机构：

[1] Univ Ferrara, Dept Phys, INFM, I-44100 Ferrara, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.1425434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A semiclassical model for Schottky contacts to be applied to nanosized polycrystalline n-type semiconductors was developed. To this purpose we determined the density of surface states as a function of the mean grain radius, which establishes the Schottky barrier height. The intergranular potential shape was investigated in depletion approximation under spherical geometry and a critical revision of this method was proposed. The model was then extended to also include nanostructured materials, which could not be considered in the previous approach. Thus we were able to explain the flattening of the band bending and the decrease in the surface state density, which are experimentally observed when the granulometry is very fine. (C) 2002 American Institute of Physics.

引用

页码：808 / 814

页数：7

共 29 条

[1]

[Anonymous], 1992, SMR

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].