CH4 THICK-FILM GAS SENSORS - CHARACTERIZATION METHOD AND THEORETICAL EXPLANATION

被引:44
作者
CAROTTA, MC [1 ]
DALLARA, C [1 ]
MARTINELLI, G [1 ]
PASSARI, L [1 ]
CAMANZI, A [1 ]
机构
[1] ENIRICERCHE SPA,I-00015 MONTEROTONDO,ITALY
关键词
D O I
10.1016/0925-4005(91)80005-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The characterization of SnO2 thick-film gas sensors made from a homemade binderless paste is given. The Hall effect has been measured together with the conductance to determine the carrier concentration and the mobility. From temperature-stimulated conductance measurements at several fixed temperatures, the range where the intergranular conductance can be reasonably considered to be constant has been explored. The microstructure and morphology of the samples are analysed by TEM and SEM observations. The results confirm for these sensors the possibility of linking the electronic structure of the bulk and the chemical state of the surface by an energy barrier model. Moreover, we correlate the difference between the maximum and the minimum of the barrier energy, DELTA-E, to the sensitivity to reducing gas.
引用
收藏
页码:191 / 196
页数:6
相关论文
共 11 条
[1]  
CHANG SC, 1983, P INT M CHEM SENSORS, P78
[2]   HALL EFFECT STUDIES OF OXYGEN CHEMISORPTION ON ZINC OXIDE [J].
CHON, H ;
PAJARES, J .
JOURNAL OF CATALYSIS, 1969, 14 (03) :257-&
[3]  
CLIFFORD PK, 1982, SENSOR ACTUATOR, V3, P255
[4]   A STUDY OF THE TEMPERATURE-DEPENDENCE OF THE BARRIER ENERGY IN POROUS TIN DIOXIDE [J].
LANTTO, V ;
ROMPPAINEN, P ;
LEPPAVUORI, S .
SENSORS AND ACTUATORS, 1988, 14 (02) :149-163
[5]  
MADOU MJ, 1989, CHEM SENSING SOLID S, P75
[6]  
Marton J. P., 1976, J ELECTROCHEM SOC, V123, p299C
[7]   SELECTIVITY IN SEMICONDUCTOR GAS SENSORS [J].
MORRISON, SR .
SENSORS AND ACTUATORS, 1987, 12 (04) :425-440
[8]   SEMICONDUCTOR GAS SENSORS [J].
MORRISON, SR .
SENSORS AND ACTUATORS, 1982, 2 (04) :329-341
[9]   HALL MEASUREMENT STUDIES AND AN ELECTRICAL-CONDUCTION MODEL OF TIN OXIDE ULTRAFINE PARTICLE FILMS [J].
OGAWA, H ;
NISHIKAWA, M ;
ABE, A .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4448-4455
[10]   DEFECT STRUCTURE AND ELECTRONIC DONOR LEVELS IN STANNIC OXIDE CRYSTALS [J].
SAMSON, S ;
FONSTAD, CG .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4618-4621