HALL MEASUREMENT STUDIES AND AN ELECTRICAL-CONDUCTION MODEL OF TIN OXIDE ULTRAFINE PARTICLE FILMS

被引：401

作者：

OGAWA, H

NISHIKAWA, M

ABE, A

机构：

来源：

关键词：

D O I：

10.1063/1.331230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4448 / 4455

页数：8

共 18 条

[1] THIN-FILMS OF SNO2 AS SOLID-STATE GAS SENSORS [J].

ADVANI, GN ;

JORDAN, AG .

[2]

[Anonymous], [No title captured], Patent No. 3695848

[3] THE INTERACTION OF TIN OXIDE-FILMS WITH O2, H-2, NO, AND H2S [J].

CAPEHART, TW ;

CHANG, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :393-397

CHANG, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :366-369

[5] THIN-FILM SEMICONDUCTOR NOX SENSOR [J].

CHANG, SC .

[6] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS [J].

DEXTER, DL ;

SEITZ, F .

PHYSICAL REVIEW, 1952, 86 (06) :964-965

[7]

DOI I, 1976, T IECE JAPAN EDD, V76, P42

[8]

DUNSTAN WR, 1905, B IMP I, V3, P41

[9]

IHOKURA K, 1979, APR ACS SDJ CHEM C H

[10]

JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]