Effects of collimator aspects ratio and deposition temperature on copper sputtered seedlayers
被引:7
作者:
Cooney, EC
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机构:
IBM Corp, Microelect, Essex Junction, VT 05452 USAIBM Corp, Microelect, Essex Junction, VT 05452 USA
Cooney, EC
[1
]
Strippe, DC
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机构:IBM Corp, Microelect, Essex Junction, VT 05452 USA
Strippe, DC
Korejwa, JW
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机构:IBM Corp, Microelect, Essex Junction, VT 05452 USA
Korejwa, JW
Simon, AH
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机构:IBM Corp, Microelect, Essex Junction, VT 05452 USA
Simon, AH
Uzoh, C
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机构:IBM Corp, Microelect, Essex Junction, VT 05452 USA
Uzoh, C
机构:
[1] IBM Corp, Microelect, Essex Junction, VT 05452 USA
[2] IBM Corp, Microelect, Hopewell Junction, NY 12533 USA
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
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1999年
/
17卷
/
04期
关键词:
D O I:
10.1116/1.581701
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We have investigated the effects of collimator aspect;ratio and deposition temperature of copper seedlayers to improve conformality in aggressive single and dual damascene structures. Collimation filters of various aspect ratios were used to deposit copper seedlayers which were then filled using electro deposition. It was found that collimators of 1.0 aspect ratio resulted in the best seedlayer conformality, as evidenced by film structure coverage and quality of plating fill. Further, electrical testing using 68000 via chains also showed the average via resistance to be lowest and the chain opens yield: to be highest with the 1.0 aspect ratio condition. Finally, thermal effects on seedlayer conformality were examined by varying the wafer temperature during deposition. It was observed that,deposition temperatures of 100 degrees C and lower resulted in smoother films as compared to seedlayers deposited at 200, 300, or even 400 degrees C. (C) 1999 American Vacuum Society. [S0734-2101(99)08604-2].
机构:
IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Andricacos, PC
Uzoh, C
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Uzoh, C
Dukovic, JO
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Dukovic, JO
Horkans, J
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Horkans, J
Deligianni, H
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
机构:
IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Andricacos, PC
Uzoh, C
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h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Uzoh, C
Dukovic, JO
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Dukovic, JO
Horkans, J
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Horkans, J
Deligianni, H
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA