Thermal decomposition of alkyl monolayers covalently grafted on (111) silicon

被引：27

作者：

Faucheux, A.

Yang, F.

Allongue, P.

De Villeneuve, C. Henry

Ozanam, F.

Chazalviel, J. -N. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France

[2] STMicroelect, F-38926 Crolles, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2202125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Alkyl monolayers have been covalently grafted onto atomically flat (111) hydrogenated silicon surfaces through hydrosilylation of 1-alkenes. The thermal stability of the layers under oxidizing or reducing atmospheres has been investigated by quantitative in situ infrared spectroscopy, using a specially designed variable-temperature cell. The layers are thermally stable up to 250 degrees C. In the range of 250-300 degrees C, the main reaction is alkene desorption accompanied with silicon oxidation. The characteristic desorption temperature is not significantly affected by changing the atmosphere, the initial packing density of the layers, or the chain length from C-18 to C-6, but very short chains appear more stable. (c) 2006 American Institute of Physics.

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页数：3

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