Fully methylated, atomically flat (111) silicon surface

被引：103

作者：

Fidélis, A ^{[1
]}

Ozanam, F ^{[1
]}

Chazalviel, JN ^{[1
]}

机构：

[1] Ecole Polytech, Phys Mat Condensee Lab, CNRS, F-91128 Palaiseau, France

来源：

SURFACE SCIENCE | 2000年 / 444卷 / 1-3期

关键词：

alkanes; chemisorption; electrochemical methods; infrared absorption; low index single crystal surfaces; silicon; surface chemical reaction; vibrations of adsorbed molecules;

D O I：

10.1016/S0039-6028(99)01065-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atomically flat hydrogenated (111) silicon surface has been methylated by anodization in a Grignard reagent and the surface obtained characterized by infrared spectroscopy. 100% substitution of the hydrogen atoms by methyl groups is observed. The resulting surface exhibits preserved ordering and superior chemical stability. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L7 / L10

页数：4

共 16 条

[1] Alkylation of Si surfaces using a two-step halogenation Grignard route [J].

Bansal, A ;

Li, XL ;

Lauermann, I ;

Lewis, NS ;

Yi, SI ;

Weinberg, WH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (30) :7225-7226

[2]

Blomberg C., 1996, HDB GRIGNARD REAGENT, P249

[3] INDUCTION-MODEL ANALYSIS OF SI-H STRETCHING MODE IN POROUS SILICON [J].

BORGHESI, A ;

GUIZZETTI, G ;

SASSELLA, A ;

BISI, O ;

PAVESI, L .

SOLID STATE COMMUNICATIONS, 1994, 89 (07) :615-618

[4] Lewis acid mediated functionalization of porous silicon with substituted alkenes and alkynes [J].

Buriak, JM ;

Allen, MJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (06) :1339-1340

[5] Surface chemistry of porous silicon [J].

Chazalviel, JN ;

Ozanam, F .

MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 :155-166

[6] Electrochemical formation of close-packed phenyl layers on Si(111) [J].

deVilleneuve, CH ;

Pinson, J ;

Bernard, MC ;

Allongue, P .

JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (14) :2415-2420

[7]

Dubois T, 1997, ELEC SOC S, V97, P296

[8] IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE [J].

HIGASHI, GS ;

CHABAL, YJ ;

TRUCKS, GW ;

RAGHAVACHARI, K .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :656-658

[9] Derivatization of porous silicon by Grignard reagents at room temperature [J].

Kim, NY ;

Laibinis, PE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (18) :4516-4517

[10] Light-induced reactions of porous and single-crystal Si surfaces with carboxylic acids [J].

Lee, EJ ;

Bitner, TW ;

Ha, JS ;

Shane, MJ ;

Sailor, MJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (23) :5375-5382

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