Microfabrication and characterization of gated amorphous diamond-based field emission electron sources

被引：2

作者：

Xu, NS ^{[1
]}

She, JC

Huq, SE

Chen, J

Deng, SZ

Chen, J

机构：

[1] Zhongshan Univ, Dept Phys, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

[2] Zhongshan Univ, Inst Condensed Matter Phys, Guangzhou 510275, Peoples R China

[3] Rutherford Appleton Lab, Cent Microstruct Facil, Didcot OX11 0QX, Oxon, England

来源：

ULTRAMICROSCOPY | 2001年 / 89卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

amorphous diamond; electron field emission; gated electron source;

D O I：

10.1016/S0304-3991(01)00111-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Gated field emission electron sources of amorphous diamond (a-D) coated Si tips and a-D diodes on a rough Si substrate were studied, detailing the deposition and characterization of the thin film, the fabrication processes and the emission behavior of the electron sources. Mechanisms responsible for the emission process of the a-D coated devices are proposed. A comparison of the field emission performance of the two types of devices is presented. In addition, future improvements of the a-D diode on a rough Si cathode are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：111 / 118

页数：8

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