An interpretation of SiO2-induced emission instability in silicon field emitter

The emission instability of silicon field emitter covered with a thin layer of oxide is modeled by considering both the electron traps within the oxide and the band bending at the silicon surface. From this model, time dependence of the emission current density and surface potential are obtained. The results are in good agreement qualitatively with the experimental data reported. The model shows that it is important to reduce the trap density within the oxide in order to improve the silicon field emitter emission stability. (C) 1998 Elsevier Science B.V. All rights reserved.