Tunable effective g factor in InAs nanowire quantum dots -: art. no. 201307

被引：133

作者：

Björk, MT ^{[1
]}

Fuhrer, A ^{[1
]}

Hansen, AE ^{[1
]}

Larsson, MW ^{[1
]}

Fröberg, LE ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, Lund, Sweden

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.72.201307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.

引用

页数：4

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