Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m

被引:115
作者
Baba, T
Fujita, M
Sakai, A
Kihara, M
Watanabe, R
机构
[1] Yokohama National University, Div. of Elec. and Comp. Engineering, Hodogayaku
关键词
GaInAsP-InP; microcavity; microdisk; semiconductor laser; whispering gallery mode;
D O I
10.1109/68.593330
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have obtained the pulsed lasing operation in 2-5-mu m diameter microdisk injection lasers using GaInAsP-InP compressive-strained multiple-quantum-well (MQW) wafer around room temperature. The effective cavity volume of the 2-mu m-diameter device is the smallest among those for any types of electrically-pumped lasers. The threshold current of this device was as low as 0.2 mA. Cavity modes in emission spectra observed under cw condition coincides well with theoretically predicted whispering gallery modes. Further reduction of diameter to less than 1.5 mu m will realize the condition for spontaneous emission almost coupling into a single mode, which results in the thresholdless lasing operation.
引用
收藏
页码:878 / 880
页数:3
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