Doping of diamond

被引：171

作者：

Kalish, R ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

来源：

CARBON | 1999年 / 37卷 / 05期

关键词：

diamond; doping; CVD; implantation; electronic properties;

D O I：

10.1016/S0008-6223(98)00270-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Diamond is a wide-bandgap semiconductor with unsurpassed physical and chemical properties. When doped, semiconducting diamond can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p-type, with boron, both during CVD diamond film growth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described. (C) 1999 Elsevier Science Ltd All rights reserved.

引用

页码：781 / 785

页数：5

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