Active mode locking of a p-Ge hot hole laser

被引：27

作者：

Hovenier, JN ^{[1
]}

Muravjov, AV ^{[1
]}

Pavlov, SG ^{[1
]}

Shastin, VN ^{[1
]}

Strijbos, RC ^{[1
]}

Wenckebach, WT ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST PHYS MICROSTRUCT,NIZHNII NOVGOROD 603600,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.119573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The generation of 200 picosecond pulses of far-infrared radiation from a p-Ge hot hole laser (50-140 cm(-1)) was achieved due to active mode locking by electrical intracavity modulation of the gain. (C) 1997 American Institute of Physics.

引用

页码：443 / 445

页数：3

共 10 条

[1] TEMPORAL AND MODE STRUCTURE OF THE INTERBAND P-GERMANIUM LASER-EMISSION [J].

BESPALOV, AV .

APPLIED PHYSICS LETTERS, 1995, 66 (20) :2703-2705

[2] MODE FINE-STRUCTURE OF THE P-GE INTERVALENCEBAND LASER MEASURED BY HETERODYNE MIXING SPECTROSCOPY WITH AN OPTICALLY PUMPED RING GAS-LASER [J].

BRUNDERMANN, E ;

ROSER, HP ;

MURAVJOV, AV ;

PAVLOV, SG ;

SHASTIN, VN .

INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (01) :59-69

[3]

GORNIK E, 1991, OPT QUANTUM ELECT, V23

[4] NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS IN P-GE [J].

KEILMANN, F ;

TILL, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B633-B635

[5]

Murav'ev A. V., 1993, Quantum Electronics, V23, P119, DOI 10.1070/QE1993v023n02ABEH002953

[6]

MURAVEV AV, 1989, SOV PHYS SEMICOND+, V23, P1071

[7] NANOSTRUCTURE GAAS SCHOTTKY DIODES FOR FAR-INFRARED HETERODYNE RECEIVERS [J].

ROSER, HP ;

HUBERS, HW ;

CROWE, TW ;

PEATMAN, WCB .

INFRARED PHYSICS & TECHNOLOGY, 1994, 35 (2-3) :451-462

[8] HOT HOLE INTERSUBBAND TRANSITION P-GE FIR LASER [J].

SHASTIN, VN .

OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 :S111-S131

[9] A MONTE-CARLO SIMULATION OF MODE-LOCKED HOT-HOLE LASER OPERATION [J].

STRIJBOS, RC ;

LOK, JGS ;

WENCKEBACH, WT .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (36) :7461-7468

[10]

Strijbos RC, 1996, HOT CARRIERS IN SEMICONDUCTORS, P631

← 1 →