A MONTE-CARLO SIMULATION OF MODE-LOCKED HOT-HOLE LASER OPERATION

被引:18
作者
STRIJBOS, RC
LOK, JGS
WENCKEBACH, WT
机构
[1] Fac. of Appl. Phys., Delft Univ. of Technol.
关键词
D O I
10.1088/0953-8984/6/36/025
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We propose a method to achieve mode-locking in a p-germanium intervalenceband laser by modulating its gain. This is done by applying an additional radiofrequency (RF) electric field parallel to the applied magnetic field. Due to the acceleration by this RF field, the light holes are no longer accumulated in the so-called passive region below the optical photon energy and the population inversion between the light and heavy hole band decreases strongly. A single-particle Monte Carlo simulation is used to study this effect more quantitatively. It is shown that an RF field of only a few per cent of the applied DC electric field already yields a peak-to-peak gain modulation of 30-50%. It is estimated that by using this method for actively mode-locking a p-Ge intervalenceband laser, picosecond FIR pulses of considerable power can be obtained.
引用
收藏
页码:7461 / 7468
页数:8
相关论文
共 21 条
[1]   AGILITY OF FELIX REGARDING WAVELENGTH AND MICROPULSE SHAPE [J].
BAKKER, RJ ;
VANDERGEER, CAJ ;
JAROSZYNSKI, DA ;
VANDERMEER, AFG ;
OEPTS, D ;
VANAMERSFOORT, PW ;
ANDEREGG, V ;
VANSON, PC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 331 (1-3) :79-83
[2]  
Bir G. L., 1974, SYMMETRY STRAIN INDU
[3]   SCATTERING RATES FOR HOLES NEAR THE VALENCE-BAND EDGE IN SEMICONDUCTORS [J].
BRUDEVOLL, T ;
FJELDLY, TA ;
BAEK, J ;
SHUR, MS .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) :7373-7382
[4]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[5]   MONTE-CARLO SIMULATION OF SEMICONDUCTOR-DEVICES [J].
JENSEN, GU ;
LUND, B ;
FJELDLY, TA ;
SHUR, M .
COMPUTER PHYSICS COMMUNICATIONS, 1991, 67 (01) :1-61
[6]   NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS IN P-GE [J].
KEILMANN, F ;
TILL, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B633-B635
[7]   PULSE BUILDUP OF THE GERMANIUM FAR-INFRARED LASER [J].
KEILMANN, F ;
SHASTIN, VN ;
TILL, R .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2205-2207
[8]   SATURATION SPECTROSCOPY OF THE P-GE FAR-INFRARED LASER [J].
KEILMANN, F ;
TILL, R .
OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 :S231-S246
[9]   LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J].
LAWAETZ, P .
PHYSICAL REVIEW, 1968, 174 (03) :867-&
[10]   MONTE-CARLO SIMULATION OF RESPONSE OF A SEMICONDUCTOR TO PERIODIC PERTURBATIONS [J].
LEBWOHL, PA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1744-1752