Fowler-Nordheim tunnelling and electrically stressed breakdown of 3-mercaptopropyltrimethoxysilane self-assembled monolayers

被引：14

作者：

Aswal, DK

Lenfant, S

Guerin, D

Yakhmi, JV

Vuillaume, D

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, Mol Nanostruct & Devices Grp, F-59652 Villeneuve Dascq, France

[2] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 12期

关键词：

D O I：

10.1088/0957-4484/16/12/056

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the confirmed occurrence of Fowler-Nordheim (FN) electron tunnelling in p(+) Si (SiOx)/self-assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS)/Au structures. The statistically favoured values of the effective mass and energy barrier heights for electrons are determined to be in the ranges 0. 15-0.18 m(e) and 1.3-1.5 eV, respectively. The electrically stressed breakdown of the monolayers is observed to take place at very high fields, i.e. 16-50 MV cm(-1). Prior to the breakdown, switching of FN currents between different conduction states was observed; this is found to be related to a change in the electrical properties of monolayers owing to the creation of field-induced defects.

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页码：3064 / 3068

页数：5

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