Molecular rectifying diodes from self-assembly on silicon

被引:152
作者
Lenfant, S [1 ]
Krzeminski, C [1 ]
Delerue, C [1 ]
Allan, G [1 ]
Vuillaume, D [1 ]
机构
[1] Inst Elect Microelect & Nanotechnol, CNRS, F-59652 Villeneuve Dascq, France
关键词
D O I
10.1021/nl034162f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (a) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3 and -0.9 V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the pi group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies; for future hybrid circuitries.
引用
收藏
页码:741 / 746
页数:6
相关论文
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