Characterization of silicon LEDs integrated with oxidized porous silicon SOI

被引：5

作者：

Balucani, M

Bondarenko, V

Dorofeev, A

Ermalitski, F

Kazuchits, N

Maiello, G

Masini, L

Melnikov, S

LaMonica, S

Volchek, S

Ferrari, A

机构：

[1] Rome University La Sapienza, 00184 Rome

[2] Belarusian Stt. Univ. Info. R., 220027 Minsk

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00028-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Slightly modified CMOS process has been used for the formation of lateral pn junctions in SOI structures based on oxidized porous silicon. Under forward bias these junctions emit infrared light at 1120 nm. Under reverse bias in the breakdown regime the pn junctions demonstrate both infrared and visible light emissions with efficiencies of 10(-4) and 10(-7), respectively. The beneficial influence of SOI structures on electroluminescence characterictics of light-emitting pn junctions has been established.

引用

页码：115 / 118

页数：4

共 7 条

[1] OPTICAL WAVE-GUIDE BASED ON OXIDIZED POROUS SILICON [J].

BONDARENKO, VP ;

DOROFEEV, AM ;

KAZUCHITS, NM .

MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) :447-450

[2]

BONDARENKO VP, 1995, NATO ASI SER, V3, P275

[3]

BONDARENKO VP, 1995, NATO ASI SER, V3, P15

[4]

FERRARI A, 1996, NATO ADV RES WORKSH

[5] Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].

Hirschman, KD ;

Tsybeskov, L ;

Duttagupta, SP ;

Fauchet, PM .

NATURE, 1996, 384 (6607) :338-341

[6] LIGHT-EMITTING DEVICES IN INDUSTRIAL CMOS TECHNOLOGY [J].

KRAMER, J ;

SEITZ, P ;

STEIGMEIER, EF ;

AUDERSET, H ;

DELLEY, B ;

BALTES, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :527-533

[7]

SOREF RA, 1993, P IEEE, V12, P1685

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