Accommodation of excess Ti in a (Ba, Sr)TiO3 thin film with 53.4% Ti grown on Pt/SiO2/Si by metalorganic chemical-vapor deposition

被引：19

作者：

Levin, I ^{[1
]}

Leapman, RD

Kaiser, DL

van Buskirk, PC

Bilodeau, S

Carl, R

机构：

[1] Natl Inst Stand & Technol, Div Ceram, Gaithersburg, MD 20899 USA

[2] NIH, ORS, Bethesda, MD 20892 USA

[3] Appl Technol Mat Inc, Danbury, CT 06810 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.124674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and chemistry of a Ti-rich (Ba, Sr)TiO3 film with 53.4% Ti deposited on a Pt/SiO2/Si substrate by metallorganic chemical-vapor deposition was studied using high-resolution transmission electron microscopy and elemental mapping in electron energy-loss spectroscopy. We established that the Ti/Ba ratio at all the grain boundaries in this film is significantly higher than that in the grain interiors. Structural images revealed the presence of disordered amorphous-like regions at some of the grain boundaries and triple junctions; these regions were tentatively identified as those having the highest Ti/Ba ratio in the chemical maps. Analysis of the electron energy-loss near-edge structure for the O-K edge indicated an increased titanium-to-oxygen coordination at the grain boundaries. No second phase was detected at the (Ba, Sr)TiO3/Pt interface. (C) 1999 American Institute of Physics. [S0003-6951(99)01735-0].

引用

页码：1299 / 1301

页数：3

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