P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

被引：66

作者：

Wang, P ^{[1
]}

Chen, NF ^{[1
]}

Yin, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

基金：

中国国家自然科学基金;

关键词：

Zinc oxide;

D O I：

10.1063/1.2193798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.

引用

页数：3

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