Observation of charge enhancement induced by graphite atomic vacancy: A comparative STM and AFM study

被引：123

作者：

Hahn, JR

Kang, H

Song, S

Jeon, IC

机构：

[1] POHANG UNIV SCI & TECHNOL, DEPT CHEM, POHANG 790784, GYEONGBUK, SOUTH KOREA

[2] JEONBUK NATL UNIV, DEPT CHEM, JEONBUK 560756, SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.53.R1725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An atomic vacancy is produced on a graphite surface by bombarding it with low-energy (40-80 eV) beams of Ar+ ions, and its structure is examined by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The atomic vacancy is imaged as a surface protrusion in STM, while it is transparent in AFM. These two contradictory results are explained by the vacancy-induced enhancement of the partial charge density of states at the carbon atoms near the vacancy. The charge enhancement can occur over tens of the surrounding carbon atoms for multiatom vacancy.

引用

收藏

页码：R1725 / R1728

页数：4

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