POINT-DEFECT FORMATION ON GRAPHITE SURFACE INDUCED BY ION IMPACT AT ENERGIES NEAR PENETRATION THRESHOLD

被引:33
作者
KANG, H
PARK, KH
KIM, C
SHIM, BS
KIM, S
MOON, DW
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT CHEM,TAEJON,SOUTH KOREA
[2] KOREA STAND RES INST,INORGAN ANALYT CHEM LAB,TAEJON,SOUTH KOREA
关键词
D O I
10.1016/0168-583X(92)95823-A
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite(0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar+ ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface.
引用
收藏
页码:312 / 315
页数:4
相关论文
共 13 条
[1]   KINETICS OF N-2+ AND N+ REACTIONS WITH MO AT LESS-THAN 100 EV IMPACT ENERGIES [J].
BALDWIN, DA ;
SHAMIR, N ;
RABALAIS, JW .
SURFACE SCIENCE, 1984, 141 (2-3) :617-638
[2]  
CHOI W, UNPUB SURF SCI
[3]   LOW-ENERGY THRESHOLD BEHAVIOR OF HE+, NE+, AND AR+ ION PENETRATION INTO A GRAPHITE(0001) SURFACE [J].
CHOI, WY ;
KANG, H .
CHEMICAL PHYSICS LETTERS, 1990, 173 (04) :316-318
[4]  
CHOI WY, 1990, B KOREAN CHEM SOC, V11, P290
[5]   SCANNING TUNNELING MICROSCOPY OF DEFECTS INDUCED BY CARBON BOMBARDMENT ON GRAPHITE SURFACES [J].
CORATGER, R ;
CLAVERIE, A ;
AJUSTRON, F ;
BEAUVILLAIN, J .
SURFACE SCIENCE, 1990, 227 (1-2) :7-14
[6]  
FARRAR JM, 1973, AIP C P, V11
[7]   INELASTIC PROCESSES IN LOW-ENERGY ION-SURFACE COLLISIONS [J].
KASI, SR ;
KANG, H ;
SASS, CS ;
RABALAIS, JW .
SURFACE SCIENCE REPORTS, 1989, 10 (1-2) :1-104
[8]   STM STUDY OF THE EFFECTS OF ETCHING ON THE SURFACE OF KISH-GRAPHITE [J].
KOGA, Y ;
MIYAZAKI, Y ;
NAKAGIRI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06) :L976-L978
[9]   SCANNING TUNNELING MICROSCOPE [J].
PARK, SI ;
QUATE, CF .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (11) :2010-2017
[10]   SCANNING TUNNELING MICROSCOPY STUDY OF SINGLE-ION IMPACTS ON GRAPHITE SURFACE [J].
PORTE, L ;
PHANER, M ;
DEVILLENEUVE, CH ;
MONCOFFRE, N ;
TOUSSET, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 44 (01) :116-119