A field emitter array with an amorphous silicon thin-film transistor on glass

被引：4

作者：

Gamo, H

Kanemaru, S

Itoh, J

机构：

[1] Toppan Printing Co Ltd, Elect Res Lab, Sugito, Saitama 3458508, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed and fabricated a field emitter array (FEA) with an amorphous silicon thin-film transistor (a-Si TFT) monolithically, as an emission control device, bn a glass substrate. The TFT was fabricated on the glass substrate at a low temperature, less than 350 degrees C. The measured emission characteristics showed that the FEA had saturated emission currents with the aid of the a-Si TFT; thus the a-Si TFT is expected to stabilize the emission current. The emission current of the FEA was controlled in the range of 0-0.12 mu A With the TFT-gate voltage from 0 to 15 V. (C) 1998 American Institute of Physics. [S0003-6951(98)02435-8].

引用

页码：1301 / 1303

页数：3

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