Liquid phase deposition film of tin oxide

The thin film of tin oxide was formed in the solution containing 0.005-0.3 mol/l SnF2. The procedure of film formation was very simple; the solution, in which a substrate is immersed, is maintained above 40 degrees C for tens of hours. In this method, the hydrolysis product of SnF2 deposited as the film on a substrate. As-deposition film included 6-16 mol% fluorine. The chemical component was deduced as SnO2-05xFx, where 0.17 <x <0.5. The film was modified to pure SnO, by heating above 300 degrees C. The electrical conductivity was improved to 1.4 x 10(-2) Omega cm by heating at 500 degrees C. The model of liquid phase deposition was proposed to extend another oxide film.