Infrared distributed Bragg reflectors based on amorphous SiC/SiO2 heterostructures

被引：12

作者：

Convertino, A

Valentini, A

Giugno, PV

Cingolani, R

机构：

[1] UNIV LECCE,DIPARTIMENTO SCI MAT,UNITA INFM,I-73100 LECCE,ITALY

[2] CSELT SPA,TURIN,ITALY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous SiC/SiO2 distributed Bragg reflectors (DBR) deposited by ion beam sputtering at room temperature is reported on in this letter. The DBR consists of only 2.5 pairs and exhibits high peak reflectivity (84%) around similar to 1.7 mu m with a full width at half maximum of about 1000 nm. The measured reflectivity spectrum is well reproduced by the equivalent layer theory by using the measured refractive indices of SiC and SiO2 and including absorption losses. (C) 1997 American Institute of Physics.

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页码：2799 / 2800

页数：2

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