Structural investigations of praseodymium oxide epitaxially grown on silicon

被引：8

作者：

Zaumseil, P ^{[1
]}

Bugiel, E ^{[1
]}

Liu, JP ^{[1
]}

Osten, HJ ^{[1
]}

机构：

[1] Goethe Univ Frankfurt, Inst Halbleiterphys, DE-15236 Frankfurt, Germany

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

heteroepitaxial growth; high-K gate material; TEM; XRD;

D O I：

10.4028/www.scientific.net/SSP.82-84.789

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si (001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N-2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.

引用

页码：789 / 794

页数：6

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