(110) channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (Rext) engineering

被引：20

作者：

Yang, B. ^{[1
]}

Waite, A. ^{[1
]}

Yin, H. ^{[2
]}

Yu, J. ^{[2
]}

Black, L. ^{[1
]}

Chidambarrao, D. ^{[2
]}

Domenicucci, A. ^{[2
]}

Wang, X. ^{[2
]}

Ku, S. H. ^{[2
]}

Wang, Y. ^{[2
]}

Meer, H. V. ^{[1
]}

Kim, B. ^{[2
]}

Nayfeh, H. ^{[2
]}

Kim, S. D. ^{[2
]}

Tabakman, K. ^{[2
]}

Pal, R. ^{[1
]}

Nummy, K. ^{[2
]}

Greene, B. ^{[2
]}

Fisher, P. ^{[1
]}

Liu, J. ^{[2
]}

Liang, Q.

Holt, J. ^{[2
]}

Narasimha, S. ^{[2
]}

Luo, Z. ^{[2
]}

Utomo, H. ^{[2
]}

Chen, X. ^{[2
]}

Park, D. ^{[2
]}

Sung, C. Y. ^{[2
]}

Wachnik, R. ^{[2
]}

Freeman, G. ^{[2
]}

Schepis, D. ^{[2
]}

Maciejewski, E. ^{[2
]}

Khare, M. ^{[2
]}

Leobandung, E. ^{[2
]}

Lining, S. ^{[1
]}

Agnello, P. ^{[2
]}

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

[2] IBM Corp, Syst Technol Grp, Fishkill, NY 12533 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1032 / 1034

页数：3

共 8 条

[1]

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[2]

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[3]

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[4]

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[5]

THOMPSON SE, 2006, IEDM, P681

[6]

WANG HCH, 2006, IEDM, P67

[7] Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current [J].

Yang, B. ;

Nummy, K. ;

Waite, A. ;

Black, L. ;

Gossmann, H. ;

Yin, H. ;

Liu, Y. ;

Kim, B. ;

Narasimha, S. ;

Fisher, P. ;

Meer, H. V. ;

Johnson, J. ;

Chidambarrao, D. ;

Kim, S. D. ;

Sheraw, C. ;

Wehella-gamage, D. ;

Holt, J. ;

Chen, X. ;

Park, D. ;

Sung, C. Y. ;

Schepis, D. ;

Khare, M. ;

Liming, S. ;

Agnello, P. .

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :126-+

[8]

Yang M, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P453

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