Biexciton formation and exciton-exciton correlation effects in bulk ZnO

被引：4

作者：

Adachi, S

Hazu, K

Sota, T

Chichibu, SF

Cantwell, G

Eason, DB

Reynolds, DC

Litton, CW

机构：

[1] Hokkaido Univ, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[2] Japan Sci & Technol Agcy, CREST, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[3] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan

[4] Univ Tsukuba, Grad Sch Pure & Appl Sci, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[5] Eagle Picher Technol LLC, Miami, OK 74354 USA

[6] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that exciton-exciton correlations strongly affect FWM signals. In particular, A exciton-B exciton correlation (bound and unbound A B-biexcitons), which can be generated even in co-circular polarizations, has a significant qualitative impact on the optical response of bulk ZnO.

引用

页码：S276 / S278

页数：3

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