Heat capacity measurements of Sn nanostructures using a thin-film differential scanning calorimeter with 0.2 nJ sensitivity

被引：59

作者：

Lai, SL ^{[1
]}

Ramanath, G ^{[1
]}

Allen, LH ^{[1
]}

Infante, P ^{[1
]}

机构：

[1] CORNELL UNIV, CORNELL NANOFABRIACT FACIL, ITHACA, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.119299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new thin-film differential scanning calorimetry technique that has extremely high sensitivity of 0.2 nJ. By combining two calorimeters in a differential measurement configuration, we have measured the heat capacity and melting process of Sn nanostructures formed via thermal evaporation with deposition thickness down to 1 Angstrom. The equivalent resolution of the calorimeter is 1 nanogram in mass or 0.4 Angstrom in thickness. We have observed a decrease of up to 120 degrees C in the melting point of Sn nanostructures. (C) 1997 American Institute of Physics.

引用

页码：43 / 45

页数：3

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