1,000,000-DEGREES-C/S THIN-FILM ELECTRICAL HEATER - IN-SITU RESISTIVITY MEASUREMENTS OF AL AND TI/SI THIN-FILMS DURING ULTRA-RAPID THERMAL ANNEALING

We introduce a new technique for rapidly heating (10(6) degrees C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current de electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 10(3) to 10(6) degrees C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within approximate to+/-10 degrees C during anneals at approximate to 10(5) degrees C/s. Phase transformations in the Ti-Si system were also observed using in situ resistivity measurements during ETA at approximate to 10(4) degrees C.